CMSD6001 CMSD6001a CMSD6001c CMSD6001s surface mount low leakage silicon switching diodes description: the central semiconductor CMSD6001 series are silicon switching diodes manufactured by the epitaxial planar process, epoxy molded in a supermini? surface mount package, designed for switching applications requiring an extremely low leakage diode. maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 250 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 275 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 455 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =75v 500 pa bv r i r =100a 100 v v f i f =1.0ma 0.85 v v f i f =10ma 0.95 v v f i f =100ma 1.1 v c t v r =0, f=1.0mhz 2.0 pf t rr i r =i f =10ma, i rr =1.0ma, r l =100 3.0 s CMSD6001: single marking code: 6c1 CMSD6001a: dual, common anode marking code: 61a CMSD6001c: dual, common cathode marking code: 61c CMSD6001s: dual, in-series marking code: 61s sot-323 case r2 (8-february 2010) www.centralsemi.com ? device is halogen free by design
CMSD6001 CMSD6001a CMSD6001c CMSD6001s surface mount low leakage silicon switching diodes lead code: 1) cathode d2 2) cathode d1 3) anode d1, d2 marking code: 61a CMSD6001a sot-323 case - mechanical outline pin configurations lead code: 1) anode d2 2) anode d1 3) cathode d1, d2 marking code: 61c CMSD6001c lead code: 1) anode 2) nc 3) cathode marking code: 6c1 CMSD6001 lead code: 1) anode d2 2) cathode d1 3) anode d1, cathode d2 marking code: 61s CMSD6001s www.centralsemi.com r2 (8-february 2010)
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